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| savantic semiconductor product specification silicon npn power transistors BUV42 d escription with to-3 package fast switching times low collector saturation voltage applications for switching applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings (tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 350 v v ceo collector-emitter voltage open base 250 v v ebo emitter-base voltage open collector 7 v i c collector current 12 a i cm collector current-peak 18 a i b base current 2.5 a i bm base current-peak 4 a p t total power dissipation t c . 25 120 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.46 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUV42 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ; l=25mh 250 v v (br)ebo emitter-base breakdown voltage i e =50ma; i c =0 7 v v cesat-1 collector-emitter saturation voltage i c =2a; i b =0.13a t j =100 0.8 0.9 v v cesat-2 collector-emitter saturation voltage i c =4a; i b =0.4a t j =100 0.9 1.2 v v cesat-3 collector-emitter saturation voltage i c =6a; i b =0.75a t j =100 1.2 1.5 v v besat-1 base-emitter saturation voltage i c =4a; i b =0.4a t j =100 1.3 v v besat-2 base-emitter saturation voltage i c =6a; i b =0.75a t j =100 1.5 v i cev collector cut-off current v ce =v cev ; v be =-1.5v t c =100 0.5 2.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1 ma switching times resistive load t r rise time 0.3 0.4 s t s storage time 1.0 1.6 s t f fall time i c =6a ;i b1 =0.75a r b2 =3.3 @ ; v cc =200v v bb =-5v; t p =30s 0.15 0.3 s savantic semiconductor product specification 3 silicon npn power transistors BUV42 package outline fig.2 outline dimensions |
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